1.

国際会議録
国際会議録
1. Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH3)6Si2]
T.W. Lee ; I.G. Yeo ; B.C. Shin ; W.J. Lee ; M.S. Park
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.107-110,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
2.

国際会議録
国際会議録
2. Process and Crucible Modification for Growth of High Doped 4H-SiC Crystal with Larger Diameter
J.H. Park ; T.K. Yang ; I.S. Kim ; W.J. Lee ; I.G. Yeo
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.17-20,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
3.

国際会議録
国際会議録
3. Thermoelectric Properties of Manganese Monosilicide Synthesized by Mechanical Alloying Process
M.K. Choi ; W.J. Lee ; I.H. Kim ; Y.G. Lee ; S.Y. Kweon
出版情報: Eco-materials processing and design XIII : selected, peer reviewed papers from the 13th International Symposium on Eco-Materials Processing and Design (ISEPD-13), January 7 - 10, Guilin, China.  pp.111-114,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 724
4.

国際会議録
国際会議録
4. Epitaxial Growth of 4H-SiC Using Si2(CH3)6+Si2Cl6+C3H8+H2 System by Atmospheric Pressure Hot CVD Method
H.S. Lee ; M.J. Kim ; M.H. Kim ; S.I. Lee ; W.J. Lee
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.97-100,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
5.

国際会議録
国際会議録
5. Thermal-Effect Study on a Carbon-Carbon Composite Using Synchrotron X-Ray Measurements & Molecular Dynamics Simulation
E.W. Huang ; C.K. Chang ; W.J. Lee ; S.Y. Lee ; J.W. Qiao
出版情報: Mechanical Stress Evaluation by Neutrons and Synchrotron Radiation VII : Selected, peer reviewed papers from the 7th International Conference on Mechanical Stress Evaluation by Neutrons and Synchrotron Radiation (MECA SENS VII 2013), September 10-12, 2013, Sydney, Australia.  pp.35-39,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 777
6.

国際会議録
国際会議録
6. Non-Polar SiC Crystal Growth with m-PIane(1-100) and α-Plane(11-20) by PVT Method
I.G. Yeo ; T.W. Lee ; W.J. Lee ; B.C. Shin ; I.S. Kim
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.37-40,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
7.

国際会議録
国際会議録
7. High Quality 3C-SiC (111) Epitaxial Layer on Si (110) Substrate by Using Si2Cl6+C3H8
H.T. Lee ; H.J. Lee ; M.S. Park ; Y.S. Jang ; W.J. Lee
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.197-200,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
8.

国際会議録
国際会議録
8. Comparative Study on Dry Etching of α- and β-SiC Nano-Pillars
J.H. Choi ; L. Latu-Romain ; E. Bano ; A. Henry ; W.J. Lee
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.817-820,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
9.

国際会議録
国際会議録
9. Quality Improvement of 4″ 4H-SiC Crystal by Using Modified Seed Adhesion Method
J.W. Choi ; J.H. Park ; J.D. Seo ; J.G. Kim ; M.O. Kyun ; K.R. Ku ; H.J. Kim ; D.H. Lee ; Y.S. Jang ; W.J. Lee
出版情報: Silicon Carbide and Related Materials 2016.  pp.11-14,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897