1.

国際会議録
国際会議録
1. Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach
Tian, S. ; Morris, M. ; Morris, S. J. ; Obradovic, B. ; Tasch, A. F.
出版情報: Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.83-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 438
2.

国際会議録
国際会議録
2. Development and Demonstration of a Two-Dimensional, Accurate and Computationally-Efficient Model for Boron Implantation into Single-Crystal Silicon Through Overlying Oxide Layers
Morris, S. ; Lim, D. ; Yang, S. -H. ; Tian, S. ; Parab, K. ; Tasch, A. F.
出版情報: Ion-solid interactions for materials modification and processing : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.27-,  1996.  Pittsburgh.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 396
3.

国際会議録
国際会議録
3. Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach
Tian, S. ; Morris, M. ; Morris, S. J. ; Obradovic, B. ; Tasch, A. F.
出版情報: Microstructure evolution during irradiation : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.101-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 439
4.

国際会議録
国際会議録
4. A New Local Electronic Stopping Model for the Monte Carlo Simulation of Arsenic Ion Implantation into (100) Single-Crystal Silicon
Yang, S.-H. ; Morris, S. ; Tian, S. ; Parab, K. ; Tasch, A. F. ; Echenique, P. M. ; Capaz, R. ; Joannopoulos, J.
出版情報: Modeling and simulation of thin-film processing : symposium held April 17-20, 1995, San Francisco, California, U.S.A..  pp.77-,  1995.  Pittsburgh.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 389
5.

国際会議録
国際会議録
5. Detailed Analysis and Computationally Efficient Modeling of Ultra-Shallow Dopant Profiles Obtained by Low Energy B, BF2, and As Ion Implantation
Parab, K. B. ; Yang, S. -H. ; Morris, S. J. ; Tian, S. ; Morris, M. ; Obradovich, B. ; Tasch, A. F. ; Kamenitsa, D. ; Simonton, R. ; Magee, C.
出版情報: Ion-solid interactions for materials modification and processing : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.769-,  1996.  Pittsburgh.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 396
6.

国際会議録
国際会議録
6. An Accurate Monte Carlo Binary Collision Model for BF2 Implants into (100) Single-Crystal Silicon
Yang, S.-H. ; Morris, S. ; Tian, S. ; Morris, M. ; Parab, K. ; Obradovich, B. ; Tasch, A.
出版情報: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.481-495,  1996.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 96-4
7.

国際会議録
国際会議録
7. A Two-Dimensional, Accurate and Computationally Efficient Model for Boron Implantation through Oxide Layers into Silicon
Morris, S. ; Lim, D. ; Yang, S.-H. ; Tian, S. ; Parab, K. ; Tasch, A.F.
出版情報: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.468-480,  1996.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 96-4