1.

国際会議録
国際会議録
1. Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face
T. Suzuki ; H. Yamaguchi ; T. Hatakeyama ; H. Matsuhata ; J. Senzaki
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.789-792,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
2.

国際会議録
国際会議録
2. Microscopic Examination of SiO2/4H-SiC Interfaces
T. Hatakeyama ; H. Matsuhata ; T. Suzuki ; T. Shinohe ; H. Okumura
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.330-333,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
3.

国際会議録
国際会議録
3. Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process
M. Nagano ; H. Tsuchida ; T. Suzuki ; T. Hatakeyama ; J. Senzaki
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.323-326,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
4.

国際会議録
国際会議録
4. Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
T. Hatakeyama ; T. Suzuki ; K. Ichinoseki ; H. Matsuhata ; K. Fukuda
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.799-804,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
5.

国際会議録
国際会議録
5. Deep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO2/SiC Interfaces on C-Face 4H-SiC
T. Hatakeyama ; T. Shimizu ; T. Suzuki ; Y. Nakabayashi ; H. Okumura
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.477-480,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742