1.

国際会議録
国際会議録
1. Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)
T. Suzuki ; J. Senzaki ; T. Hatakeyama ; K. Fukuda ; T. Shinohe
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.791-794,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
2.

国際会議録
国際会議録
2. Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC
T. Hatakeyama ; T. Suzuki ; J. Senzaki ; K. Fukuda ; H. Matsuhata
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.783-786,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
3.

国際会議録
国際会議録
3. Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)
C. Ota ; J. Nishio ; K. Takao ; T. Hatakeyama ; T. Shinohe
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.655-658,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
4.

国際会議録
国際会議録
4. Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N2O Nitridation
T. Suzuki ; J. Senzaki ; T. Hatakeyama ; K. Fukuda ; T. Shinohe
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.557-560,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
5.

国際会議録
国際会議録
5. Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing
M. Nagano ; H. Tsuchida ; T. Suzuki ; T. Hatakeyama ; J. Senzaki
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.477-480,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
6.

国際会議録
国際会議録
6. Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
T. Hatakeyama ; H. Kono ; T. Suzuki ; J. Senzaki ; K. Fukuda
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.553-556,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
7.

国際会議録
国際会議録
7. Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System
T. Hatakeyama ; K. Ichinoseki ; N. Higuchi ; K. Fukuda ; K. Arai
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.553-556,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
8.

国際会議録
国際会議録
8. Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC
M. Nagano ; H. Tsuchida ; T. Suzuki ; T. Hatakeyama ; J. Senzaki
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.611-614,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
9.

国際会議録
国際会議録
9. Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)
C. Ota ; J. Nishio ; T. Hatakeyama ; T. Shinohe ; K. Kojima ; S.I. Nishizawa ; H. Ohashi
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.881-884,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
10.

テクニカルペーパー
テクニカルペーパー
10. Temperature and Time Dependence of Device Interactions in Submicron Si CMOS
T. Hatakeyama ; K. Fushinobu ; K. Okazaki
出版情報: AIAA meeting papers on disc.  2006.  Reston, Va.  American Institute of Aeronautics and Astronautics
シリーズ名: AIAA Paper : AIAA/ASME Joint Thermophysics and Heat Transfer Conference
シリーズ巻号: 2006