1.

国際会議録
国際会議録
1. An Investigation of Material Limit Characteristics of SiC IGBTs
T. Hatakeyama ; K. Fukuda ; H. Okumura
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1143-1146,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
2.

国際会議録
国際会議録
2. Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
T. Hatakeyama ; T. Suzuki ; K. Ichinoseki ; H. Matsuhata ; K. Fukuda
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.799-804,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
3.

国際会議録
国際会議録
3. Deep-Level Transient Spectroscopy Characterization of Interface States in SiO2/4H-SiC Structures Close to the Conduction Band Edge
T. Hatakeyama ; M. Sometani ; K. Fukuda ; H. Okumura ; T. Kimoto
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.424-427,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780