1.

国際会議録
国際会議録
1. Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing
Chung, H.J. ; Liu, J.-Q. ; Henry, A. ; Skowronski, M.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.253-256,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
2.

国際会議録
国際会議録
2. Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy
Neudeck, P.G. ; Powell, J.A. ; Spry, D.J. ; Trunek, A.J. ; Huang, X. ; Vetter, W.M. ; Dudley, M. ; Skowronski, M. ; Liu, J.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.213-216,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436