1.

国際会議録
国際会議録
1. Factors Influencing the Electrical and Optical Properties of AlGaN Layers on Sapphire
Shin, M. ; Polyakov, A. Y. ; Skowronski, M. ; Greve, D. W. ; Wilson, R. G. ; Freitas, J. A.
出版情報: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.643-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 423
2.

国際会議録
国際会議録
2. The Influence of Hydrogen Plasma Passivation on Electrical and Optical Properties of AlGaN Samples Grown on Sapphire
Polyakov, A. Y. ; Shin, M. ; Pearton, S. J. ; Skowronski, M. ; Greve, D. W. ; Freitas, J. A.
出版情報: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.607-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 423
3.

国際会議録
国際会議録
3. A Microscopic Evaluation of the Surface Structure of OMVPE Deposited α-GaN Epilayers
Rohrer, G. S. ; Payne, J. ; Qian, W. ; Skowronski, M. ; Doverspike, K. ; Rowland, L. B. ; Gaskill, D. K.
出版情報: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.381-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 395
4.

国際会議録
国際会議録
4. Electrical and Optical Investigation of the Position of Vanadium Related Defects in the 4H and 6H SiC Bandgaps
Jenny, J. R. ; Skowronski, M. ; Mitchel, W. C. ; Smith, S. R. ; Evwaraye, A. O. ; Hobgood, H. M. ; Augustine, G. ; Hopkins, R. H.
出版情報: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.507-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 423