1.

国際会議録
国際会議録
1. 26 Tantalum-based Gate Electrode Metals for Advanced CMOS Devices
Hooker, J. C. ; Lander, R.J.P. ; Cubaynes, F. N. ; Schram, T. ; Roozeboom, F. ; van Zijl, J. ; Moos, M. ; van den Heuvel, F.C. ; Naburgh, E. ; van Berkum, J. G. M. ; Tamminga, Y. ; Dao, T. ; Henson, K. ; Schaekers, M. ; van Ammel, A. ; Tokei, Z. ; Demand, M. ; Dachs, C. (Invited Paper)
出版情報: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.215-224,  2005.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2005-05
2.

国際会議録
国際会議録
2. Compatibility of Polysilicon with HfO2-based Gate Dielectrics for CMOS Applications
Kaushik, V. ; De Gendt, S. ; Caymax, M. ; Young, E. ; Rohr, E. ; Van Elshocht, S. ; Delabie, A. ; Claes, M. ; Shi, X. ; Chen, I. ; Carter, R. ; Conard, T. ; Vandervorst, W. ; Schaekers, M. ; Heyns, M.
出版情報: ULSI Process Integration : proceedings of the International Symposium.  pp.391-396,  2003.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2003-6
3.

国際会議録
国際会議録
3. Study of Pulsed RF DPN Process Parameters for 65 um node MOSFET Gate Dielectrics
Rothschild, A. ; Kraus, P.A. ; Chua, T.C. ; Nouri, F. ; Cubaynes, F.N. ; Veloso, A. ; Mertens, S. ; Date, L. ; Schreutelkamp, R. ; Schaekers, M.
出版情報: Integration of advanced micro- and nanoelectronic devices - critical issues and solutions : symposium held April 13-16, 2004, San Francisco, California, U.S.A..  pp.49-56,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 811
4.

国際会議録
国際会議録
4. Deposition of undoped and in-situ doped amorphous and polycrystalline silicon with LPCVD
Schaekers, M. ; Shi, X.
出版情報: EUROCVD-15, fifteenth European Conference on Chemical Vapor Deposition : proceedings of the international symposium.  pp.652-658,  2005.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2005-09
5.

国際会議録
国際会議録
5. Curing Study Of Hydrogen Silsesquioxane Under H2N2 Ambient
Donaton, R.A. ; Coenegrachts, B. ; Sleeckx, E. ; Schaekers, M. ; Sophie, G. ; Matsuki, N. ; Baklanov, M.R. ; Struyf, H. ; Lepage, M. ; Vanhaelemeersch, S. ; Beyer, G. ; Stucchi, M. ; De Roest, D. ; Maex, K.
出版情報: Materials, technology and reliability for advanced interconnects and low-k dielectrics : symposium held April 23-27, 2000, San Francisco, California, U.S.A..  pp.D5.12-,  2001.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 612
6.

国際会議録
国際会議録
6. Further Optimization of Plasma Nitridation of Ultra-thin Oxides for 65 nm 236 Node MOSFETs
Kraus, P.A. ; Chua, T.C. ; Rothschild, A. ; Cubaynes, F.N ; Veloso, A. ; Mertens, S. ; Date, L. ; Baue, T.M. ; Ahmed, K.Z. ; Campbell, J. ; Noun, F. ; Cruse, J. ; Schreutelkamp, R. ; Schaekers, M.
出版情報: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.236-243,  2004.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2004-01