1.

国際会議録
国際会議録
1. THE ARSENIC ANTISITE DEFECT IN GaAs AND ITS RELATION TO EL2
HOFMANN,D.M. ; SPAETH,J.-M. ; MAYER,B.K.
出版情報: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part1  pp.311-316,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 10-12
2.

国際会議録
国際会議録
2. ENDOR INVESTIGATION OF THE Ga VACANCY IN GaP.
HAGE,J. ; NIKLAS,J.R. ; SPAETH,J.-M.
出版情報: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part1  pp.259-264,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 10-12
3.

国際会議録
国際会議録
3. APPLICATION OF OPTICALLY DETECTED MAGNETIC RESONANCE TO THE CHARACTERIZATION OF POINT DEFECTS IN SEMICONDUCTORS.
SPAETH,J.-M.
出版情報: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part2  pp.505-514,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 10-12