CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers

CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers

著者名:

掲載資料名:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

シリーズ名:

Materials science forum

シリーズ巻号:

645-648

発行年:

2010

パート:

1

開始ページ:

211

終了ページ:

214

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054155
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2009
会議開催地:	Nurnberg, Germany
会議開催年:	2009.10.11-2009.10.16
論文注記:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

類似資料:

1 国際会議録 Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers P.B. Klein, R.L. Myers-Ward, K.K. Lew, B.L. VanMil, C.R. Eddy Jr. Trans Tech Publications	7 国際会議録 Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas R.L. Myers-Ward, L.O. Nyakiti, J.K. Hite, O.J. Glembocki, F.J. Bezares Trans Tech Publications
2 国際会議録 Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes R.L. Myers-Ward, K.K. Lew, B.L. VanMil, R.E. Stahlbush, K.X. Liu Trans Tech Publications	8 国際会議録 Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.J. Marinella, D.K. Schroder, P.B. Klein Trans Tech Publications
3 国際会議録 Identification of Defects Limiting the Carrier Lifetime in n^-Epitaxial Layers of 4H-SiC P.B. Klein Trans Tech Publications	9 国際会議録 Defects Limiting Minorty Carrier Lifetime in 4H-SiC Epilayers P. B. Klein, B. Shanabrook, S. Huh, A. Polyakov, M. Skowronski, J. Sumakeris, M. O'Loughlin Electrochemical Society
4 国際会議録 Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers V.D. Wheeler, B.L. VanMil, R.L. Myers-Ward, S. Chung, Y.N. Picard Trans Tech Publications	10 国際会議録 Crystalline Quality and Surface Morphology of 3C-SiC Films on Si Evaluated by Electron Channeling Contrast Imaging Y.N. Picard, C. Locke, C.L. Frewin, M.E. Twigg, S.E. Saddow Trans Tech Publications
5 国際会議録 Basal Plane Dislocation Mitigation in 8° Off-Cut 4H-SiC through In Situ Growth Interrupts during Chemical Vapor Deposition B.L. Vanmil, R.E. Stahlbush, R.L. Myers-Ward, Y.N. Picard, S.A. Kitt Trans Tech Publications	11 国際会議録 Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping T. Miyazawa, T. Tawara, H. Tsuchida Trans Tech Publications
6 国際会議録 Evolution of D1-Defect Center in 4H-SiC during High Temperature Annealing S.I. Maximenko, J.A. Freitas Jr., N.Y. Garces, E.R. Glaser, M.A. Fanton Trans Tech Publications	12 国際会議録 Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth R.E. Stahlbush, B.L. VanMil, K.X. Liu, K.K. Lew, R.L. Myers-Ward Trans Tech Publications

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