1.

国際会議録
国際会議録
1. Lateral AlxGal-xN Power Rectifiers with 9.7 kV Reverse Breakdown Voltage
Zhang, A.P. ; Johnson, J.W. ; Ren, F. ; Han, J. ; Polyakov, A.Y. ; Smirnov, N.B. ; Govorkov, A.V. ; Redwing, J.M. ; Lee, K.P. ; Pearton, S.J.
出版情報: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.167-172,  2001.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2001-1
2.

国際会議録
国際会議録
2. High Performance Small Area Contact GaN/AlGaN HBTs
Lee, K.P. ; Zhang, A.P. ; Ren, F. ; Han, J. ; Hobson, W.S. ; Pearton, S.J.
出版情報: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.161-166,  2001.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2001-1
3.

国際会議録
国際会議録
3. Surface Preparation and Oxide Growth for GaN MOSFETs*
Gila, B.P. ; Johnson, J.W. ; Lee, K.N. ; Krishnamoorthy, V. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
出版情報: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.71-83,  2001.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2001-1
4.

国際会議録
国際会議録
4. Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics
Gila, B.P. ; Luo, B. ; Kim, J. ; Mehandru, R. ; LaRoche, J.R. ; Onstine, A.H. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
出版情報: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.212-223,  2003.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2003-11
5.

国際会議録
国際会議録
5. The Effect of External Strain on the Conductivity of AIGaN/GaN High Electron Mobility Transistors
Kang, B.S. ; Kim, S. ; Kim, J. ; Ren, F. ; Baik, K. ; Pearton, S.J. ; Gila, B.P. ; Abernathy, C.R. ; Pan, C.-C. ; Chen, G.-T. ; Chyi, J.-I. ; Chandrasekaran, V. ; Sheplak, M. ; Nishida, T. ; Chu, S.N.G.
出版情報: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.292-297,  2003.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2003-11
6.

国際会議録
国際会議録
6. GaN Power Devices
Pearton, S.J. ; Ren, F. ; Zhang, A.P. ; Dang, G. ; Cac, X.A. ; Lee, K.P. ; Cho, H. ; Gila, B.P. ; Johnson, J.W. ; Monier, C. ; Abernathy, C.R. ; Han, J. ; Baca, A.G. ; Chyi, J.-I. ; Lee, C.-M. ; Nee, T.-E. ; Chuo, C.-C. ; Chi, G.C. ; Chu, S.N.G.
出版情報: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.99-113,  2000.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2000-18
7.

国際会議録
国際会議録
7. Performance of Intra-Cavity Contacted, Shallow Implant Apertured Vertical-Cavity Surface Emitting Lasers *
Hobson, W.S. ; Lopata, J. ; Chirovsky, L.M.F. ; Chu, S.N.G. ; Dang, G. ; Ren, F. ; Tayahi, M.B. ; Pearton, S.J.
出版情報: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.265-272,  2001.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2001-1
8.

国際会議録
国際会議録
8. Study of Radiation Induced Resistance Mechanisms in GaAs MESFET and TLM Structures
Luo, B. ; Schoenfeld, D. ; Johnson, W.J. ; Pearton, S.J. ; Ren, F.
出版情報: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.250-257,  2001.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2001-1
9.

国際会議録
国際会議録
9. The Effect of N2 Plasma Damage on DC and RF Characteristics of HEMTs
Luo, B. ; Trivedi, V.P. ; Ren, F. ; Hsu, C.H. ; Pearton, S.J. ; Abernathy, C.R. ; Cao, X. ; Wu, C.S. ; Hoppe, M. ; Sasserath, J. ; Lee, J.W.
出版情報: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.158-170,  2000.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2000-18
10.

国際会議録
国際会議録
10. p-Ohmic Contact Study for Intra-Cavity Contacts in AlGaAs/GaAs VCSELs
Luo, B. ; Dang, G. ; Zhang, A.-P. ; Ren, F. ; Lopata, J. ; Chu, S.N.G. ; Hobson, W.S ; Pearton, S.J.
出版情報: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.232-240,  2001.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2001-1