1.

国際会議録
国際会議録
1. Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy
Herzog, B. ; Rohmfeld, S. ; Pusche, R. ; Hundhausen, M. ; Ley, L. ; Semmelroth, K. ; Pensl, G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.625-628,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
2.

国際会議録
国際会議録
2. Oxidation of Silicon Carbide: Problems and Solutions
Afanas'ev, V.V. ; Bassler, M. ; Pensl, G. ; Stesmans, A.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.961-966,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
3.

国際会議録
国際会議録
3. Codoping of 4H-SiC with N- and P-Donors by Ion Implantation
Laube, M. ; Schmid, F. ; Pensl, G. ; Wagner, G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.791-794,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
4.

国際会議録
国際会議録
4. Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC
Schmid, F. ; Laube, M. ; Pensl, G. ; Wagner, G. ; Maier, M.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.787-790,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
5.

国際会議録
国際会議録
5. Oxidation of Silicon Carbide: Problems and Solutions
Afanas'ev, V.V. ; Bassler, M. ; Pensl, G. ; Stesmans, A.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.961-966,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
6.

国際会議録
国際会議録
6. Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
Wagner, G. ; Leitenberger, W. ; Irmscher, K. ; Schmid, F. ; Laube, M. ; Pensl, G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.207-210,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
7.

国際会議録
国際会議録
7. Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiC
Choyke, W.J. ; Devaty, R.P. ; Bai, S. ; Gali, A. ; Deak, P. ; Pensl, G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.585-588,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
8.

国際会議録
国際会議録
8. Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy
Kawasuso, A. ; Weidner, M. ; Redmann, F. ; Frank, T. ; Krause-Rehberg, R. ; Pensl, G. ; Sperr, P. ; Triftshauser, W. ; Itoh, H.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.489-492,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
9.

国際会議録
国際会議録
9. Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
Wagner, G. ; Leitenberger, W. ; Irmscher, K. ; Schmid, F. ; Laube, M. ; Pensl, G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.207-210,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
10.

国際会議録
国際会議録
10. Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiC
Choyke, W.J. ; Devaty, R.P. ; Bai, S. ; Gali, A. ; Deak, P. ; Pensl, G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.585-588,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393