1.

国際会議録
国際会議録
1. TuD19:Improvement of performance of a tracking servo system for an optical disk drive
Arai,K. ; Okumura,H. ; Tokumaru,H. ; Ohishi,K.
出版情報: ISOM/ODS '99 : joint international symposium on Optical Memory and Optical Data Strage 1999, 11-15 July 1999 Sheraton Kauai Resort, Koloa, Howaii.  pp.163-165,  1999.  Bellingham, Washington.  SPIE - The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3864
2.

国際会議録
国際会議録
2. Lattice strain in excimer-laser-crystallized poly-Si thin films
Okumura,H. ; Tanikawa,A. ; Sera,K. ; Okumura,F.
出版情報: Laser applications in microelectronic and optoelectronic manufacturing IV : 25-27 January 1999, San Jose, California.  pp.320-327,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3618
3.

国際会議録
国際会議録
3. Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation
Ohshima,T. ; Uedono,A. ; Itoh,H. ; Abe,K. ; Suzuki,R. ; Ohdaira,T. ; Aoki,Y. ; Yoshikawa,M. ; Mikado,T. ; Okumura,H. ; Yoshida,S. ; Tanigawa,S. ; Nashiyama,I.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.745-748,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
4.

国際会議録
国際会議録
4. CVD Growth Mechanism of 3C-SiC on Si Substrates
Ishida,Y. ; Takahashi,T. ; Okumura,H. ; Yoshida,S. ; Sekigawa,T.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.183-186,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
5.

国際会議録
国際会議録
5. Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positron
Itoh,H. ; Yoshikawa,M. ; Nashiyama,I. ; Wei,L. ; Tanigawa,S. ; Misawa,S. ; Okumura,H. ; Yoshida,S.
出版情報: Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992.  pp.501-506,  1993.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 117-118
6.

国際会議録
国際会議録
6. Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays
Yoshikawa,M. ; Saitoh,K. ; Ohshima,T. ; Itoh,H. ; Nashiyama,I. ; Takahashi,Y. ; Ohnishi,K. ; Okumura,H. ; Yoshida,S.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1017-1020,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
7.

国際会議録
国際会議録
7. Surface Reconstruction and As Surfactant Effects on MBE-Grown GaN Epilayers
Okumura,H. ; Hamaguchi,H. ; Ohta,K. ; Feuillet,G. ; Balakrishnan,K. ; Ishida,Y. ; Chichibu,S. ; Nakanishi,H. ; Nagatomo,T. ; Yoshida,S.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1167-1172,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
8.

国際会議録
国際会議録
8. STM Observation of Initial Nitridation Process of Ga on Si Substrates
Nakada,Y. ; Okumura,H.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1209-1212,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
9.

国際会議録
国際会議録
9. Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si Substrates
Takahashi,T. ; Ishida,Y. ; Okumura,H. ; Yoshida,S. ; Sekigawa,T.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.207-210,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268