1.

国際会議録
国際会議録
1. Glasses-free stereoscopic projection display with a wide viewing angle for multiple observers
Arimoto,A. ; Ohshima,T. ; Kaneko,H. ; Kaneko,Y.
出版情報: Projection displays V : 26-28 January 1999, San Jose, California.  pp.134-144,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3634
2.

国際会議録
国際会議録
2. Hot-Implantation of Phosphorus Ions into 6H-SiC
Abe,K. ; Ohshima,T. ; Itoh,H. ; Aoki,Y. ; Yoshikawa,M. ; Nashiyama,I. ; Iwami,M.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.721-724,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
3.

国際会議録
国際会議録
3. Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation
Ohshima,T. ; Uedono,A. ; Itoh,H. ; Abe,K. ; Suzuki,R. ; Ohdaira,T. ; Aoki,Y. ; Yoshikawa,M. ; Mikado,T. ; Okumura,H. ; Yoshida,S. ; Tanigawa,S. ; Nashiyama,I.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.745-748,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
4.

国際会議録
国際会議録
4. ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons
Cha,D. ; Itoh,H. ; Morishita,N. ; Kawasuso,A. ; Ohshima,T. ; Watanabe,Y. ; Ko,J. ; Lee,K. ; Nashiyama,I.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.615-618,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
5.

国際会議録
国際会議録
5. Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays
Yoshikawa,M. ; Saitoh,K. ; Ohshima,T. ; Itoh,H. ; Nashiyama,I. ; Takahashi,Y. ; Ohnishi,K. ; Okumura,H. ; Yoshida,S.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1017-1020,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
6.

国際会議録
国際会議録
6. Stereoscopic projection display using curved directional reflection screen
Ohshima,T. ; Komoda,O. ; Kaneko,Y. ; Arimoto,A.
出版情報: Stereoscopic Displays and Virtual Reality Systems IV.  PartA  pp.140-144,  1997.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3012