1.

国際会議録
国際会議録
1. Characterization of Deep Level Defects in 4H and 6H SiC Via DLTS, SIMS and MeV E-Beam Irradiation
Doyle, J. P. ; Aboelfotoh, M. O. ; Linnarsson, M. K. ; Svensson, B. G. ; Schoner, A. ; Nordell, N. ; Harris, C. ; Lindstrom, J. L. ; Janzen, E. ; Hemmingsson, C.
出版情報: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.519-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 423
2.

国際会議録
国際会議録
2. Characterization of p-type buffer layers for SiC microwave device applications
Konstantinov, A. O. ; Karlsson, S. ; Nilsson, P-A. ; Saroukhan, A-M. ; Svedberg, J-O. ; Nordell, N. ; Harris, C. I. ; Eriksson, J. ; Rorsman, N.
出版情報: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.197-,  1999.  Warrendale, PA.  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 572