1.

国際会議録
国際会議録
1. ABSOLUTE PRESSURE DEPENDENCE OF THE SECOND IONIZATIN LEVEL OF EL2 IN GaAs
Bliss, D.E. ; Walukiewicz, W. ; Nolte, D.D. ; Haller, E.E.
出版情報: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.815-820,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 163
2.

国際会議録
国際会議録
2. High-quality, Non-Stoichiometric Multiple Quantum Wells
Melloch, M.R. ; Lahiri, I. ; Nolte, D.D. ; Chang, J.C.P. ; Harmon, E.S. ; Woodall, J.M.
出版情報: Proceedings of the Third International Symposium on Quantum Confinement: Physics and Applications.  pp.236-243,  1996.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 95-17