1.

国際会議録
国際会議録
1. Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy
N. Iwamoto ; A. Azarov ; T. Ohshima ; A.M.M. Moe ; B.G. Svensson
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.357-360,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
2.

国際会議録
国際会議録
2. Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection Efficiency
N. Iwamoto ; A. Koizumi ; S. Onoda ; T. Makino ; T. Ohshima
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.267-270,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
3.

国際会議録
国際会議録
3. Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC
A. Koizumi ; N. Iwamoto ; S. Onoda ; T. Ohshima ; T. Kimoto
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.201-204,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
4.

国際会議録
国際会議録
4. Peak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC MOS Capacitors
T. Makino ; N. Iwamoto ; S. Onoda ; T. Ohshima ; K. Kojima
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.469-472,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
5.

国際会議録
国際会議録
5. Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays
T. Ohshima ; N. Iwamoto ; S. Onoda ; T. Makino ; S. Nozaki
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.362-365,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
6.

国際会議録
国際会議録
6. Anatase Type Titanium Dioxide Prepared by Oxidation of Titanium Carbide
J. Matsushita ; T. Tsuchiyama ; K. Hamaguchi ; N. Iwamoto ; X.L. Wang
出版情報: Composite Materials and Material Engineering : Selected, peer reviewed papers from the 2016 International Conference on Composite Materials and Material Engineering, March 9-11, 2016, Bangkok, Thailand.  pp.92-96,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 860
7.

国際会議録
国際会議録
7. SIMS Analysis of Fe Impurity Concentration in a PVT-Grown 4H-SiC Bulk Crystal and Source Powders
N. Iwamoto ; A. Azarov ; L. Vines ; A.M.M. Moe ; B.G. Svensson
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.81-84,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
8.

国際会議録
国際会議録
8. Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy
N. Iwamoto ; S. Onoda ; N. Fujita ; T. Makino ; T. Ohshima
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.289-292,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
9.

国際会議録
国際会議録
9. Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation
N. Iwamoto ; S. Onoda ; T. Ohshima ; K. Kojima ; A. Koizumi
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.921-924,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
10.

国際会議録
国際会議録
10. Radiation-Induced Currents in 4H-SiC Dosimeters for Real-Time Gamma-Ray Dose Rate Monitoring
N. Fujita ; N. Iwamoto ; S. Onoda ; T. Makino ; T. Ohshima
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.1042-1045,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780