1.

国際会議録
国際会議録
1. Ion Implantation Induced Deep Defects in n-Type 4H-Silicon Carbide
Evwaraye, A.O. ; Smith, S.R. ; Mitchel, W.C. ; Capano, M.A.
出版情報: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.175-180,  2003.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 742
2.

国際会議録
国際会議録
2. The Effect of Annealing on High-Resistivity and Semi-Insulating 4H-SiC
Smith, S.R. ; Evwaraye, A.O. ; Mitchel, W.C.
出版情報: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.277-282,  2003.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 742
3.

国際会議録
国際会議録
3. Electrical and Multifrequency EPR Study of Nitrogen and Carbon Antisite-Related Native Defect in n-Type As-Grown 4H-SiC
Kalabukhova, E.N. ; Lukin, S.N. ; Mitchel, W.C.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.499-502,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436