1.

国際会議録
国際会議録
1. EFFECTS OF GAMMA-RAY IRRADIATION AND THERMAL ANNEALING ON CHARACTERISTICS OF 3C-SiC MOS STRUCTURE
Yoshikawa, M. ; Morita, Y. ; Itoh, H. ; Nashiyama, I. ; Okumura, H. ; Misawa, S. ; Yoshida, S.
出版情報: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.797-802,  1993.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 281
2.

国際会議録
国際会議録
2. Sticking Probability of the Film Precursor in Epitaxial Growth of SiC Films by Chemical Vapor Deposition from SiH4 and C3H8
Hong, L.S. ; Komiyama, H. ; Misawa, S. ; Yoshida, S.
出版情報: Proceedings of the Twelfth International Symposium on Chemical Vapor Deposition.  pp.401-407,  1993.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 1993-2