Blank Cover Image

PROPERTIES OF WSiX-SCHOTTKY DIODES ON N-TYPE GaAs SPUTTERED UNDER UHV BACKGROUND CONDITIONS

著者名:
Pletschen, W.
Kaufel, G.
Maier, M.
Olander, E.
Wiegert, J.
Bachem, K. H.
Rupprecht, H. S.
さらに 2 件
掲載資料名:
Advances in materials, processing, and devices in III-V compound semiconductors
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
144
発行年:
1989
開始ページ:
619
終了ページ:
624
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990173 [1558990178]
言語:
英語
請求記号:
M23500/144
資料種別:
国際会議録

類似資料:

1 国際会議録 GaInP/GaInAs/GaAs-MODEFETs with Pseudomorphic GaInP Barrier, Device Concept and Device Properties

Pletschen, W., Bachem, K.H., Chertouk, M., Buerkner, S., Braunstein, J.

Electrochemical Society
7 国際会議録 Effect of Irradiation Induced Interface Defects on GaAs Schottky Diodes

Dharmarasu,N., Arulkumaran,S., Sumathi,R.R., Jayavel,P., Kumar,J., Magudapathy,P., Nair,K.G.M.

Narosa Publishing House
2 国際会議録 AlGaInP/GaAs MODFET Devices with Etched P+-GaAs Gate Structures: Sub-micron Gates from 1 μm Lithography

Pletschen, W., Bachem, K.H.

Electrochemical Society
8 国際会議録 High-performance 6-in. EUV mask blanks produced under real production conditions by ion-beam sputter deposition

Becker, H.W., Sobel, F., Aschke, L., Renno, M., Krieger, J., Buttgereit, U., HeB, G., Lenzen, F., Knapp, K., Yulin, …

SPIE-The International Society for Optical Engineering
3 国際会議録 A NOVEL GaAs BIPOLAR TRANSISTOR STRUCTURE WITH GaInP-HOLE INJECTION BLOCKING BARRIER

Pletschen, W., Bachem, K. H., Lauterbach, T.

Materials Research Society
9 国際会議録 Surface Studies at Atmospheric Pressure and Under UHV Conditions During Growth of GaAs

Pemble E. M., Francis M. S., Buhaenko S. D., Goulding A. P.

Plenum Press
4 国際会議録 AlGaInP/GaInAs/GaAs MODFET DEVICES WITH SELF-ALIGNED P+-GaAs GATE STRUCTURE

Pletschen, W., Bachem, K. H., Tasker, P. J., Winkler, K.

MRS - Materials Research Society
10 国際会議録 Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature Conditions

Nakagomi, S., Shinobu, H., Uneus, L., Lundstrom, I., Ekedahl, L.-G., Yakimova, R., Syvaejaervi, M., Henry, A., Janzen, …

Trans Tech Publications
5 国際会議録 Pseudomorphic AlGaInP/GaAs MODFETs: Novel Device Concepts for Simple Fabrication Schemes

Pletschen, W., Bachem, K.H., Tasker, P.J., Winkler, K.

Electrochemical Society
11 国際会議録 Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature Conditions

Nakagomi, S., Shinobu, H., Uneus, L., Lundstrom, I., Ekedahl, L.-G., Yakimova, R., Syvajarvi, M., Henry, A., Janzen, E., …

Trans Tech Publications
6 国際会議録 ETCHING OF GaAs ON AlGaAs IN RIE-MODE

Kaufel, Gudrun, Olander, Elfriede

Materials Research Society
12 国際会議録 InAs/Ga1-xInxSb infrared superlattice diodes:correlation between surface morphology and electrical performance

Fuchs,F., Burkle,L., Pletschen,W., Schmitz,J., Walther,M., Gullich,H., Herres,N., Muller,S.

SPIE - The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12