1.

国際会議録
国際会議録
1. QUASI-STOICHIOMETRIC SILICON NITRIDE THIN FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION
Lucovsky, G. ; Ma, Y. ; He, S.S. ; Yasuda, T. ; Stephens, D.J. ; Habermehl, S.
出版情報: Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A..  pp.33-38,  1993.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 284
2.

国際会議録
国際会議録
2. ELECTRICAL PROPERTIES OF OXIDE-NITRIDE-OXIDE, ONO, HETEROSTRUCTURES FABRICATED BY LOW TEMPERATURE REMOTE PECVD
Ma, Y. ; Yasuda, T. ; Chen, Y.L. ; Lucovsky, G. ; Maher, D.M.
出版情報: Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A..  pp.147-152,  1993.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 284
3.

国際会議録
国際会議録
3. Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS
Ma, Y. ; Yasuda, T. ; Habermehl, S. ; Lucovsky, G.
出版情報: Photons and low energy particles in surface processing : symposium held Decmber[i.e. December] 3-6, 1991, Boston, Massachusetts, U.S.A..  pp.341-348,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 236
4.

国際会議録
国際会議録
4. Non-Contact Characterization of Ultrathin Dielectrics for the Gigabit Era
Roy, P.K. ; Chacon, C. ; Ma, Y. ; Kizilyalli, I.C. ; Horner, O.S. ; Verkuil, R.L. ; Miller, T.G.
出版情報: Proceedings of the Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices.  pp.280-294,  1997.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 97-12
5.

国際会議録
国際会議録
5. Thermal Stability of Organic Interlayer with Low Dielectric Constant
Hara, T. ; Takasoh, J. ; Yang, H. ; Tweet, D.J. ; Nguyen, T. ; Ma, Y. ; Evans, D.R. ; Hsu, S.T.
出版情報: Dielectric material integration for microelectronics.  pp.79-87,  1998.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 98-3
6.

国際会議録
国際会議録
6. The Partial Oxidation of Methane to Synthesis Gas by Oxygen Selective Dense Perovskite Membrane Reactors
Ma, Y. ; Tsia, C. ; Moser, W. ; Dixon, A.
出版情報: AIChE NATIONAL MEETING - MARCH 9-13, 1997 - HOUSTON, TX.  1997.  New York.  American Institute of Chemical Engineers
シリーズ名: AIChE meeting [papers]
シリーズ巻号: 1997
7.

国際会議録
国際会議録
7. CHEMICALLY MODIFIED SECOND HARMONIC GENERATION AT SURFACES ON VICINAL Si(111) WAFERS
Emmerichs, U. ; Meyer, C. ; Leo, K. ; Kurz, H. ; Bjorkman, C.H. ; Shearon, Jr., C.E. ; Ma, Y. ; Yasuda, T. ; Lucovsky, G.
出版情報: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.815-820,  1993.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 281
8.

国際会議録
国際会議録
8. Si(100) SURFACE PREPARATION BY IN-SITU OR IN-VACUO EXPOSURE TO REMOTELY PLASMA-GENERATED ATOMIC HYDROGEN: APPLICATIONS TO DEPOSITED SiO2 AND EPITAXIAL GROWTH OF Si
Yasuda, T. ; Ma, Y. ; Habermehl, S. ; Kim, S.S. ; Lucovsky, G. ; Schneider, T.P. ; Cho, J. ; Nemanich R.J.
出版情報: Evolution of thin-film and surface microstructure : symposium held November 26-December 1, 1990, Boston, Massachusetts, U.S.A..  pp.395-400,  1991.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 202
9.

国際会議録
国際会議録
9. COMPARISON OF TRAPPING STATES AT SiQ2/473Si INTERFACES ON Si(100), (110), AND (111) PREPARED BY PLASMA-ASSISTED OXIDATION AND OXIDE DEPOSITION, AND BY EXPOSURE TO ATOMIC H PRIOR TO OXIDATION AND DEPOSITION
Yasuda, T. ; Ma, Y. ; Habermechl, S. ; Lucovsky, G.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.473-480,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
10.

国際会議録
国際会議録
10. A NEW TWO-STEP PLASMA-ASSISTED SURFACE CLEANING-OXIDATION AND FILM-DEPOSITION PROCESS SEQUENCE FOR THE FORMATION OF Si(100)/SiO2 INTERFACES WITH LOW DENSITIES OF INTERFACIAL TRAPS
Ma, Y. ; Yasuda, T. ; Habermehl, S. ; He, S.S. ; Stephens, D.J. ; Lucovsky, G.
出版情報: Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A..  pp.69-74,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 259