4H-SiC Trench Structure Schottky Diodes

4H-SiC Trench Structure Schottky Diodes

著者名:

掲載資料名:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

シリーズ名:

Materials science forum

シリーズ巻号:

717-720

発行年:

2012

パート:

2

開始ページ:

933

終了ページ:

936

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054207
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
回次:	14th
会議開催地:	Cleveland, Ohio, USA
会議開催年:	2011.09.11-2011.09.16
論文注記:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

類似資料:

1 国際会議録 Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy M. Nakamura, Y. Hashino, T. Furusho, H. Kinoshita, H. Shiomi Trans Tech Publications	7 国際会議録 Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics S. Yang, Q.W. Song, X.Y. Tang, Y.M. Zhang, H. Yuan, Q.J. Sun Trans Tech Publications
2 国際会議録 Electrical Characterization of 1.2 kV-Class SiC MOSFET at High Temperature up to 380° C Y. Nanen, M. Aketa, Y. Nakano, H. Asahara, T. Nakamura Trans Tech Publications	8 国際会議録 Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition Suda, J., Nakamura, S., Miura, M., Kimoto, T., Matsunami, H. Trans Tech Publications
3 国際会議録 Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes Nakamura, T., Miyanagi, T., Kamata, I., Tsuchida, H. Trans Tech Publications	9 国際会議録 Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition Suda, J., Nakamura, S., Miura, M., Kimoto, T., Matsunami, H. Trans Tech Publications
4 国際会議録 SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth Miura, M., Nakamura, S.-i., Suda, J., Kimoto, T., Matsunami, H. Trans Tech Publications	10 国際会議録 Planar Schottky Microwave Diodes on 4H-SiC Sudow, M., Rorsman, N., Nilsson, P. A., Zirath, H. Trans Tech Publications
5 国際会議録 600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination T. Yamamoto, T. Endo, N. Kato, H. Nakamura, T. Sakakibara Trans Tech Publications	11 国際会議録 690V, 1.00 mΩcm² 4H-SiC Double-Trench MOSFETs Y. Nakano, R. Nakamura, H. Sakairi, S. Mitani, T. Nakamura Trans Tech Publications
6 国際会議録 Cathodoluminescence Study of SiO₂/4H-SiC Structures Treated with High-Temperature Post-Oxidation Annealing A. Chanthaphan, Y. Fukushima, K. Yamamoto, M. Aketa, H. Asahara Trans Tech Publications	12 国際会議録 4H-SiC Trench Schottky Diodes for Next Generation Products Q.C.J. Zhang, J. Duc, V. Mieczkowski, B. Hull, S. Allen Trans Tech Publications

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