1.

国際会議録
国際会議録
1. The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC
F.Z. Wu ; M. Dudley ; H.H. Wang ; S. Byrappa ; S. Sun
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.217-220,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
2.

国際会議録
国際会議録
2. Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers
Y. Yang ; J. Guo ; O.Y. Goue ; B. Raghothamachar ; M. Dudley
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.105-108,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
3.

国際会議録
国際会議録
3. Post-Growth Micropipe Formation in 4H-SiC
J. Quast ; M. Dudley ; J. Guo ; D. Hansen ; I. Manning
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.367-370,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
4.

国際会議録
国際会議録
4. Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC
H.H. Wang ; S. Byrappa ; F. Wu ; B. Raghothamachar ; M. Dudley
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.327-330,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
5.

国際会議録
国際会議録
5. Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC
F.Z. Wu ; H.H. Wang ; S. Byrappa ; B. Raghothamachar ; M. Dudley
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.343-346,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
6.

国際会議録
国際会議録
6. Material Defects and Rugged Electrical Power Switching in Semiconductors
K. Shenai ; P.G. Neudeck ; M. Dudley ; R.F. Davis
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1077-1080,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
7.

国際会議録
国際会議録
7. Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a
M. Dudley ; H.H. Wang ; F.Z. Wu ; S. Byrappa ; B. Raghothamachar
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.269-272,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
8.

国際会議録
国際会議録
8. Correlation of Lifetime Mapping of 4H-SiC Epilayers with Structural Defects Using Synchrotron X-Ray Topography
O.Y. Goue ; Y. Yang ; J.Q. Guo ; B. Raghothamachar ; M. Dudley
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.297-300,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
9.

国際会議録
国際会議録
9. Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy
M. Dudley ; N. Zhang ; Y. Zhang ; B. Raghothamachar ; E.K. Sanchez
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.295-298,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
10.

国際会議録
国際会議録
10. Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography
H.H. Wang ; F.Z. Wu ; M. Dudley ; B. Raghothamachar ; G. Chung
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.328-331,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780