1.

国際会議録
国際会議録
1. Experimental Determination of the Specific Positron Trapping Rates in Semiconductors
Krause-Rehberg,R. ; Polity,A. ; Abgarjan,Th.
出版情報: Positron annihilation : ICPA-10 : Proceedings of the 10th International Conference on Positron Annihilation, May 23-29, 1994, Beijing, China.  Part1  pp.427-430,  1995.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 175-178
2.

国際会議録
国際会議録
2. Application of the Positron Lifetime Spectroscopy as a Method of Non-Destructive Testing
Somieski,B. ; Krause-Rehberg,R.
出版情報: Positron annihilation : ICPA-10 : Proceedings of the 10th International Conference on Positron Annihilation, May 23-29, 1994, Beijing, China.  Part2  pp.989-992,  1995.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 175-178
3.

国際会議録
国際会議録
3. Investigations of Vacancy Defects in CdTe by Means of Positron Annihilation
Polity,A. ; Abgarjan,Th. ; Krause-Rehberg,R.
出版情報: Positron annihilation : ICPA-10 : Proceedings of the 10th International Conference on Positron Annihilation, May 23-29, 1994, Beijing, China.  Part1  pp.473-476,  1995.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 175-178
4.

国際会議録
国際会議録
4. Generation of Point Defects during Plastic Deformation of InP
Leipner,H.S. ; Krause-Rehberg,R. ; Htibner,C.
出版情報: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1267-1272,  1995.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 196-201
5.

国際会議録
国際会議録
5. Hg Vacancies in Hg1-xCdxTe Studied by Positron Annihilation
Krause-Rehberg,R. ; Abgajan,Th. ; Polity,A. ; Neubert,M.
出版情報: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1285-1290,  1995.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 196-201
6.

国際会議録
国際会議録
6. Study of the Compensating Centres in GaAs:Te by Positron Annihilation
Krause-Rehberg,R. ; Dlubek,C. ; Polity,A.
出版情報: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1649-1654,  1995.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 196-201
7.

国際会議録
国際会議録
7. Vacancy Type Defects in GaAs after Electron Irradiation Studied by Positron Lifetime Spectroscopy
Polity,A. ; Nagel,C. ; Krause-Rehberg,R.
出版情報: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1249-1254,  1995.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 196-201
8.

国際会議録
国際会議録
8. Sintering of Copper;Nickel and Tungsten Studied by Positron Lifetime Spectroscpoy
Staab,T. ; Hubner,Ch. ; Krause-Rehberg,R. ; Leipner,H.S. ; Zeiger,W. ; Vetter,B.
出版情報: Positron annihilation : ICPA-10 : Proceedings of the 10th International Conference on Positron Annihilation, May 23-29, 1994, Beijing, China.  Part1  pp.541-544,  1995.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 175-178