5.5-kV Bipolar Diodes From High-Quality CVD 4H-SiC

5.5-kV Bipolar Diodes From High-Quality CVD 4H-SiC

著者名:

Irvine, K. G.

掲載資料名:

Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

512

発行年:

1998

開始ページ:

119

出版情報:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994188 [1558994181]

言語:

英語

請求記号:

M23500/512

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017997
シリーズID:	PA00000011
会議名:	Symposium on wide-bandgap semiconductors for high power, high frequency and high temperature
回次:	1998
会議開催地:	San Francisco, CA, USA
会議開催年:	1998.04.13-1998.04.14

類似資料:

1 国際会議録 Characterization of thick 4H-SiC hot-wall CVD layers Paisley, M. J., Irvine, K. G., Kordina, O., Singh, R., Palmour, J. W., Carter, C. H. Jr. MRS-Materials Research Society	7 国際会議録 2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development Agarwal, A., Ryu, S. -H., Singh, R., Kordina, O., Palmour, J. W. Trans Tech Publications
2 国際会議録 Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition Kordina,O., Irvine,K., Sumakeris,J., Kong,H.S., Paisley,M.J., ,C.H.Carter,Jr. Trans Tech Publications	8 国際会議録 High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production Muller, St.G., Brady, M.F., Brixius, W.H., Fechko, G., Glass, R.C., Henshall, D., Hobgood, H.M., Jenny, J.R., Leonard, … Trans Tech Publications
3 国際会議録 Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices Sumakeris, J. J., Das, M. K., Ha, S., Hurt, E., Irvine, K., Paisley, M. J., O'Loughlin, M. J., Palmour, J. W., … Trans Tech Publications	9 国際会議録 High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production Muller, St.G., Brady, M.F., Brixius, W.H., Fechko, G., Glass, R.C., Henshall, D., Hobgood, H.M., Jenny, J.R., Leonard, … Trans Tech Publications
4 国際会議録 Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices Sumakeris, J.J., Das, M., Hobgood, H.McD., Mueller, S.G., Paisley, M.J., Ha, S., Skowronski, M., Palmour, J.W., Carter, … Trans Tech Publications	10 国際会議録 Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities Dyakonova, N. V., Ivanov, P. A., Kozlov, V. A., Levinshtein, M. E., Palmour, J. W., Rumyantsev, S. L., Singh, R. Trans Tech Publications
5 国際会議録 High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers Singh, R., Irvine, K.G., Richmond, J.T., Palmour, J.W. Trans Tech Publications	11 国際会議録 Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes Ivanov, P. A., Levinshtein, M. E., Mnatsakanov, T. T., Palmour, J. W., Singh, R., Irvin, K. G., Das, M. Trans Tech Publications
6 国際会議録 High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers Singh, R., Irvine, K.G., Richmond, J.T., Palmour, J.W. Trans Tech Publications	12 テクニカルペーパー Design of Dual Use, High Efficiency, 4H-SIC Schottky and MPS Diodes Severt,C., Agarwal,A., Singh,R., Ryu,S-H., Palmour,J.W. American Institute of Aeronautics and Astronautics

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