1.

国際会議録
国際会議録
1. Structural evolution of GaN during initial stage MOCVD growth
Kim, C. C. ; Je, J. H. ; Yi, M-S. ; Noh, D. Y.
出版情報: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W3.52.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 595
2.

国際会議録
国際会議録
2. Nucleation of GaN on (0001) Sapphire During MOCVD Growth: An Atomic Force and High Resolution Electron Microscopy Study
Degave, F. ; Ruterana, P. ; Nouet, G. ; Je, J. H. ; Kim, C. C.
出版情報: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 639