1.

国際会議録
国際会議録
1. Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
F.C. Beyer ; C. Hemmingsson ; H. Pedersen ; A. Henry ; J. Isoya
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.249-252,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
2.

国際会議録
国際会議録
2. The Carbon Vacancy Related E14 Defect in 4H-SiC
N.T. Son ; P. Carlsson ; J. Isoya ; N. Morishita ; T. Ohshima
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.399-402,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
3.

国際会議録
国際会議録
3. Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC
F.C. Beyer ; C. Hemmingsson ; H. Pedersen ; A. Henry ; J. Isoya
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.435-438,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648