1.

国際会議録
国際会議録
1. Limitations in Very Fast Growth of 4H-SiC Crystals by High-Temperature Gas Source Method
N. Hoshino ; I. Kamata ; Y. Tokuda ; E. Makino ; N. Sugiyama
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.29-32,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
2.

国際会議録
国際会議録
2. Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method
I. Kamata ; N. Hoshino ; Y. Tokuda ; E. Makino ; N. Sugiyama
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.61-64,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
3.

国際会議録
国際会議録
3. Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction
H. Tsuchida ; I. Kamata ; M. Ito ; T. Miyazawa ; H. Uehigashi
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.119-124,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
4.

国際会議録
国際会議録
4. Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth
H. Uehigashi ; K. Fukada ; M. Ito ; I. Kamata ; H. Fujibayashi
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.173-176,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
5.

国際会議録
国際会議録
5. Three-Dimensional Imaging of Extended Defects in 4H-SiC
R. Tanuma ; M. Nagano ; I. Kamata ; H. Tsuchida
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.361-366,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
6.

国際会議録
国際会議録
6. X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC
R. Tanuma ; D. Mori ; I. Kamata ; H. Tsuchida
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.323-326,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
7.

国際会議録
国際会議録
7. Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography
R. Tanuma ; D. Mori ; I. Kamata ; H. Tsuchida
出版情報: Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan.  pp.3-6,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 725
8.

国際会議録
国際会議録
8. Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
I. Kamata ; X. Zhang ; H. Tsuchida
出版情報: Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan.  pp.15-18,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 725
9.

国際会議録
国際会議録
9. Investigation of Photoluminescence Emission of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
I. Kamata ; X. Zhang ; H. Tsuchida
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.310-313,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
10.

国際会議録
国際会議録
10. Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques
H. Tsuchida ; I. Kamata ; M. Ito ; T. Miyazawa ; N. Hoshino
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.85-90,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780