1.

国際会議録
国際会議録
1. The Impact of Pregrowth Conditions and Substrate Polytype on SiC Epitaxial Layer Morphology
Burk, A. A., Jr. ; Rowland, L. B. ; Augustine, G. ; Hobgood, H. M. ; Hopkins, R. H.
出版情報: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.275-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 423
2.

国際会議録
国際会議録
2. The Relationship Between Micropipes and Screw Dislocations in PVT Grown 6H-SiC
Giocondi, Jennifer ; Rohrer, Gregory S. ; Skowronski, Marek ; Balakrishna, V. ; Augustine, G. ; Hobgood, H. M. ; Hopkins, R. H.
出版情報: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.539-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 423
3.

国際会議録
国際会議録
3. Electrical and Optical Investigation of the Position of Vanadium Related Defects in the 4H and 6H SiC Bandgaps
Jenny, J. R. ; Skowronski, M. ; Mitchel, W. C. ; Smith, S. R. ; Evwaraye, A. O. ; Hobgood, H. M. ; Augustine, G. ; Hopkins, R. H.
出版情報: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.507-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 423