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Ultralow Thermal Budget Rapid Thermal Processing for Thin Gate Oxide Dielectrics: Reduction of Suboxide Transition Regions in Low-Temperature Processed Si/SiO2 Structures by a 900。?30-Second Rapid Thermal Anneal

著者名:
掲載資料名:
Rapid thermal and integrated processing VI : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
470
発行年:
1997
開始ページ:
355
出版情報:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993747 [1558993746]
言語:
英語
請求記号:
M23500/470
資料種別:
国際会議録

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