1.

国際会議録
国際会議録
1. ELECTRONIC STRUCTURE OF TWO SULPHUR-RELATED BOUND EXCITONS IN SILICON STUDIED BY OPTICAL DETECTION OF MAGNETIC RESONANCE
Chen, W.M. ; Henry, A. ; Janzen, E. ; Monemar, B. ; Thewalt, M.L.W.
出版情報: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.303-306,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 163
2.

国際会議録
国際会議録
2. DEFECT-FORMATION DEPENDENCE ON GROUP V-DOPANT ATOMS IN ELECTRON-IRRADIATED SILICON
Awadelkarim, O.O. ; Henry, A. ; Monemar, B. ; Lindstrom, J.L.
出版情報: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.283-286,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 163
3.

国際会議録
国際会議録
3. Efficient Nonradiative Recombination Centers in MBE-Grown Si and SiGe/Si Heterostructures
Chen, W. M. ; Buyanova, I. A. ; Henry, A. ; Ni, W.-X. ; Hansson, G. V. ; Monemar, B.
出版情報: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.135-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 378
4.

国際会議録
国際会議録
4. PHOTOLUMINESCENCE STUDY OF HYDROGEN-RELATED DEFECTS IN SILICON
Henry, A. ; Monemar, B. ; Lindstrom, J. L. ; Zhang, Y. ; Corbett, J. W.
出版情報: Diagnostic techniques for semiconductor materials processing : Symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A..  pp.261-,  1994.  Pittsburgh.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 324
5.

国際会議録
国際会議録
5. Deep Photoluminescence Bands in MBE Grown Si and SiGe
Buyanova, I. A. ; Henry, A. ; Chen, W. M. ; Ni, W. X. ; Hansson, G. V. ; Monemar, B.
出版情報: Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A..  pp.405-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 379
6.

国際会議録
国際会議録
6. Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
Paskova, T. ; Svedberg, E. B. ; Madsen, L. D. ; Yakimova, R. ; Ivanov, I. G. ; Henry, A. ; Monemar, B.
出版情報: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.16.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 537
7.

国際会議録
国際会議録
7. ASPECTS OF CRYSTAL QUALITY OF Si(100) FILMS GROWN BY MOLECULAR BEAN EPITAXY
Ni, W.-X. ; Henry, A. ; Ekberg, J.O. ; Hansson, G.V.
出版情報: Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A..  pp.97-102,  1991.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 220
8.

国際会議録
国際会議録
8. Radiative Recombination Processes in Boron Modulation-Doped SiGe Quantum Wells
Buyanova, I. A. ; Chen, W. M. ; Henry, A. ; Ni, W. X. ; Hansson, G. V. ; Monemar, B.
出版情報: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.881-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 378
9.

国際会議録
国際会議録
9. Characterization of Defects Created in Silicon Due to Etching in Low-Pressure Plasmas Containing Fluorine and Oxygen
Buyanova, I. A. ; Henry, A. ; Monemar, B. ; Lindstrom, J. L. ; Lamprecht, A. ; Svensson, B. G. ; Oehrlein, G. S.
出版情報: Ion-solid interactions for materials modification and processing : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.599-,  1996.  Pittsburgh.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 396