1.

国際会議録
国際会議録
1. THE INFLUENCE OF THERMAL TREATMENT ON DEFECT CHARACTERISTICS IN CZ-SILICON WAFERS INVESTIGAGED BY POSITRON ANNIHILATION SPECTROSCOPY
Mascher, P. ; Puff, W. ; Hahn, S. ; Cho. K. H. ; Lee, B. Y.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.665-670,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
2.

国際会議録
国際会議録
2. HEAT-TREATMENT INDUCED DEFECTS IN CZ-SILICON
Dannefaer, S. ; Bretagnon, T. ; Abdurahman, K. ; Kerr, D. ; Hahn, S.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.671-676,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
3.

国際会議録
国際会議録
3. EFFECTS OF SILICON ION IMPLANTATION UPON THIN GATE OXIDE INTEGRITY
Lee, G.-S. ; Park, J. -G. ; Choi, S. -P. ; Shin, C.-H, ; Sun, Y.-B ; Kwak, Y.-S. ; Shin, C.-K. ; Smith, W. L. ; Hahn, S.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.1043-1048,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
4.

国際会議録
国際会議録
4. INVESTIGATION OF METAL INDUCED SURFACE DEFECTS IN CZOCHRALSKI Si FOLLOWING RAPID THERMAL PROCESSING BY THERMAL WAVE MODULATED REFLECTANCE METHOD
Hahn, S. ; Smith, W. L. ; Suga, H. ; Park, J. G. ; Lim, C. S. ; Kwak, Y.-S. ; Meinecke, R. ; Kola, R. R. ; Rozgonyi, G. A. ; Kwack, K. D.
出版情報: Rapid thermal and integrated processing : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A..  pp.81-88,  1991.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 224