1.

国際会議録
国際会議録
1. Dynamical Simulation of SiO2/4H-SiC(0001) Interface Oxidation Process: from First-Principles
T. Ohnuma ; A. Miyashita ; M. Iwasawa ; M. Yoshikawa ; H. Tsuchida
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.615-620,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
2.

国際会議録
国際会議録
2. Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation
L. Storasta ; H. Tsuchida
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.603-606,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
3.

国際会議録
国際会議録
3. Generation of Amorphous SiO2/SiC Interface Structure by the First-Principles Molecular Dynamics Simulation
A. Miyashita ; T. Ohnuma ; M. Iwasawa ; H. Tsuchida ; M. Yoshikawa
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.521-524,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
4.

国際会議録
国際会議録
4. Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient
M. Ito ; H. Tsuchida ; I. Kamata ; L. Storasta
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.81-84,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
5.

国際会議録
国際会議録
5. Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm2
R. Ishii ; K. Nakayama ; H. Tsuchida ; Y. Sugawara
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1015-1018,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
6.

国際会議録
国際会議録
6. Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer
H. Tsuchida ; M. Ito ; I. Kamata ; M. Nagano
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.67-72,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
7.

国際会議録
国際会議録
7. High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers
I. Kamata ; M. Nagano ; H. Tsuchida ; Y. Chen ; M. Dudley
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.305-308,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
8.

国際会議録
国際会議録
8. Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy
H. Tsuchida ; I. Kamata ; M. Nagano
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.267-272,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
9.

国際会議録
国際会議録
9. Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing
M. Nagano ; H. Tsuchida ; T. Suzuki ; T. Hatakeyama ; J. Senzaki
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.477-480,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
10.

国際会議録
国際会議録
10. Enhanced Annealing of the Main Lifetime Limiting Defect in Thick 4H-SiC Layers
L. Storasta ; T. Miyazawa ; H. Tsuchida
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.477-480,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603