1.

国際会議録
国際会議録
1. Effects of Structural Defects on Diode Properties in 4H-SiC
Skromme, B.J. ; Palle, K.C. ; Mikhov, M.K. ; Meidia, H. ; Mahajan, S. ; Huang, X.R. ; Vetter, W.M. ; Dudley, M. ; Moore, K. ; Smith, S. ; Gehoski, T.
出版情報: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.181-186,  2003.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 742
2.

国際会議録
国際会議録
2. Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices
Dudley, M. ; Huang, X. ; Vetter, W.M. ; Neudeck, P.G.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.247-252,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
3.

国際会議録
国際会議録
3. Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy
Neudeck, P.G. ; Powell, J.A. ; Spry, D.J. ; Trunek, A.J. ; Huang, X. ; Vetter, W.M. ; Dudley, M. ; Skowronski, M. ; Liu, J.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.213-216,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
4.

テクニカルペーパー
テクニカルペーパー
4. Thermal System Design and Dislocation Reduction for Growth of Wide Bandgap Crystals.
Ma, R.-H. ; Zhang, H. ; Dudley, M. ; Prasad, V.
出版情報: A.S.M.E. paper.  2003.  New York, NY.  American Society of Mechanical Engineers
シリーズ名: ASME Technical Paper : HT
シリーズ巻号: 2003