1.

国際会議録
国際会議録
1. *Pendeo-epitaxial growth and characterization of GaN and related materials on 6H-SiC(0001) and Si(111) substrates
Davis, R. F. ; Gehrke, T. ; Linthicum, K. J. ; Zheleva, T. S. ; Rajagopal, P. ; Zorman, C. A. ; Mehregany, M.
出版情報: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W2.1.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 595
2.

国際会議録
国際会議録
2. Photoluminescence characterization of Mg implanted GaN
Ronning, C. ; Hofsass, H. C. ; Stotzler, A. ; Deicher, M. ; Carlson, E. P. ; Hartlieb, P. J. ; Gehrke, T. ; Rajagopal, P. ; Davis, R. F.
出版情報: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.44.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 595
3.

国際会議録
国際会議録
3. Influence of Annealing Conditions on Dopant Activation of Si+ and Mg+ Implanted GaN
Suvkhanov, A. ; Parikh, N. ; Usov, I. ; Hunn, J. ; Withrow, S. ; Thomson, D. ; Gehrke, T. ; Davis, R. F. ; Krasnobaev, L. Ya.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1615-1618,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
4.

国際会議録
国際会議録
4. Lateral- and Pendeo-epitaxial Growth and Defect Reduction in GaN Thin Films
Davis, R. F. ; Nam, O. -H. ; Zheleva, T. S. ; Gehrke, T. ; Linthicum, K. J. ; Rajagopal, P.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1471-1476,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
5.

国際会議録
国際会議録
5. Peudeo-EpitaxyTM process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition
Gehrke, T. ; Linthicum, K. J. ; Rajagopal, P. ; Preble, E. A. ; Carlson, E. P. ; Robin, B. M. ; Davis, R. F.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1491-1494,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
6.

国際会議録
国際会議録
6. Advanced PENDEOEPITAXY(TM) of GaN and AlxGa1-xN thin films on SiC(0001) and Si(111) substrates via metalorganic chemical vapor deposition
Gehrke, T. ; Linthicum, K. J. ; Rajagopal, P. ; Preble, E. A. ; Davis, R. F.
出版情報: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W2.4.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 595