The Temperature Dependent Breakdown Voltage For 4H- and 6H-SiC Diodes

The Temperature Dependent Breakdown Voltage For 4H- and 6H-SiC Diodes

著者名:

掲載資料名:

Wide-bandgap electronic devices

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

622

発行年:

2001

開始ページ:

T6.4

出版情報:

Warrendale, PA.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995307 [1558995307]

言語:

英語

請求記号:

M23500/622

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014208
シリーズID:	PA00000011
会議名:	Sympsoium on Wide-Bandgap Electronic Devices ; MRS Spring Meeting
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.24-2000.04.27

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2 国際会議録 The Estimation and Revision of Barrier Heights in 4H-SiC and 6H-SiC Schottky Diodes Lee, You-Sang, Kim, D-Y., Oh, J-K., Han, M-K., Choi, Y-I. MRS - Materials Research Society	8 国際会議録 6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage Brezeanu, G., Badila, M., Millan, J., Godignon, P., Locatelli, M. L., Chante, J. P., Lebedev, A., Banu, V. Trans Tech Publications
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5 国際会議録 Avalanche Multiplication and Breakdown in 4H-SiC Diodes Ng, B.K., David, J.P.R., Massey, D.J., Tozer, R.C., Rees, G.J., Yan, F., Zhao, J.H., Weiner, M. Trans Tech Publications	11 国際会議録 Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation Isoird, K., Ottaviani, L., Locatelli, M. L., Planson, D., Raynaud, C., Bevilacqua, P., Chante, J. P. Trans Tech Publications
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