1.

国際会議録
国際会議録
1. Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation
Goodman, S. A. ; Auret, F. D. ; Koschnick, F. K. ; Spaeth, J-M. ; Beaumont, B. ; Gibart, P.
出版情報: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.12.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 537
2.

国際会議録
国際会議録
2. Electrical Characterization of Sputter Deposition Induced Defects in n-GaN
Auret, F. D. ; Goodman, S. A. ; Koschnick, F. K. ; Spaeth, J-M. ; Beaumont, B. ; Gibart, P.
出版情報: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.13.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 537
3.

国際会議録
国際会議録
3. Phonons and Holes in Magnesium-Doped GaN
Demangeot, F. ; Frandon, J. ; Renucci, M. A. ; Smirnov, D. ; Leotin, J. ; Grandjean, N. ; Beaumont, B. ; Kuball, M. ; Davies, T. ; Steeds, J. W.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.333-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
4.

国際会議録
国際会議録
4. Low Frequency Noise in n-Type Gallium Nitride
Dyakonova, N. ; Levinshtein, M. ; Contreras, S. ; Knap, W. ; Beaumont, B. ; Gibart, P.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.21-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
5.

国際会議録
国際会議録
5. Direct Observation of Atomic Structures of Defects in GaN by High-Resolution Z-Contrast STEM
Xin, Y. ; Pennycook, S. J. ; Browing, N. D. ; Nellist, P. D. ; Sivanathan, S. ; Beaumont, B. ; Faurie, J-P. ; Gibart, P.
出版情報: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.781-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 482
6.

国際会議録
国際会議録
6. Comparative Study of GaN MOVPE Growth Processes Using Two Different "Surface Preparation-Carrier Gas" Combinations
Vennegues, P. ; Haffouz, S. ; Bouille, A. ; Leroux, M. ; Beaumont, B.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.273-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
7.

国際会議録
国際会議録
7. Characterization of Near-Edge-Optical Transitions in Undoped and Doped GaN/Sapphire Grown by MOVPE, HVPE, and GSMBE
Leroux, M. ; Beaumont, B. ; Grandjean, N. ; Massies, J. ; Gibart, P.
出版情報: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.695-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 449
8.

国際会議録
国際会議録
8. Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers
Seitz, R. ; Gaspar, C. ; Monteiro, T. ; Pereira, E. ; Poisson, M. A. ; Beaumont, B.
出版情報: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.419-,  1999.  Warrendale, PA.  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 572
9.

テクニカルペーパー
テクニカルペーパー
9. Information systems research at the global hydrology and climate center
Conover, H. ; Beaumont, B. ; Graves, S.
出版情報: AIAA paper.  pp.1-5,  1996.  American Institute of Aeronautics and Astronautics
シリーズ名: AIAA Paper : AIAA Space Programs and Technologies Conference
シリーズ巻号: 1996