1.

国際会議録
国際会議録
1. REMOTE PLASMA CLEANING AND ION-INDUCED HYDROGEN DESORPTION FROM THE SILICON (100) SURFACE AND ITS APPLICATIONS TO Si EPITAXY
Kinosky, David S. ; Qian, R. ; Mahajan, A. ; Thomas, S. ; Fretwell, J. ; Munguia, P. ; Banerjee, S. ; Tasch, A.
出版情報: Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.831-836,  1993.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 279
2.

国際会議録
国際会議録
2. STUDY OF SITOX PROCESS AND ITS APPLICATION TO ADVANCED MOS DEVICES
Lin, J. ; Chen, W. ; Banerjee, S. ; Lee, J. ; Teng, C. ; Magee, C.
出版情報: Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A..  pp.623-628,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 260
3.

国際会議録
国際会議録
3. CONTROL OF POLYSILICON EMITTER BIPOLAR TRANSISTOR CHARACTERISTICS BY RAPID THERMAL OR FURNACE ANNEAL OF THE POLYSILICON/SILICON INTERFACE
Bhattacharya, S. ; Lobo, M. ; Jung, L. ; Banerjee, S. ; Reuss, R. ; Batra, S. ; Park, K. ; Hu, G.
出版情報: Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.721-726,  1993.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 283
4.

国際会議録
国際会議録
4. THE DEPENDENCE OF DEFECT DENSITY IN GeXSi1-X/Si HETEROSTRUCTURES GROWN BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION ON DEPOSITION PARAMETERS
Kinosky, D. ; Qian, R. ; Hsu, T. ; Irby, J. ; Mahajan, A. ; Thomas, S. ; Banerjee, S. ; Tasch, A. ; Magee, C. ; Grove, C. L.
出版情報: Mechanisms of Heteroepitaxial growth : symposium held April 27-30, 1992, San Francisco, California, U.S.A..  pp.445-450,  1992.  Pittsburgh, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 263
5.

国際会議録
国際会議録
5. GROWTH AND HIGH RESOLUTION TEM CHARACTERIZATION OF Ge Si1-x/Si HETERO-STRUCTURES BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
Qian, R. ; Chung, I. ; Kinosky, D. ; Hsu, T. ; Irby, J. ; Mahajan, A. ; Thomas, S. ; Banerjee, S. ; Tasch, A. ; Rabenberg, L. ; Grove, C. ; Magee, C.
出版情報: Photons and low energy particles in surface processing : symposium held Decmber[i.e. December] 3-6, 1991, Boston, Massachusetts, U.S.A..  pp.353-360,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 236
6.

国際会議録
国際会議録
6. THERMAL STABILITY OF COBALT DISILICIDE FOR SELF-ALIGNED SILICIDE APPLICATIONS
Chen, W. ; Lin, J. ; Banerjee, S. ; Lee, J.
出版情報: Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A..  pp.163-168,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 260
7.

国際会議録
国際会議録
7. Study of Polysilicon TFTs for High Density SRAM Applications
Zaman, R.J. ; Batra, S. ; Manning, M. ; Banerjee, S.
出版情報: Proceedings of the Third Symposium on Thin Film Transistor Technologies.  pp.342-351,  1996.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 96-23
8.

国際会議録
国際会議録
8. HETEROEPITAXY OF Si/Si1-xGex GROWN BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION
Hsu, T. ; Qian, R. ; Kinosky, D. ; Irby, J. ; Anthony, B. ; Banerjee, S. ; Tasch, A. ; Magee, C.
出版情報: Low energy ion beam and plasma modification of materials : symposium held April 30-May 2, 1991, Anaheim, California, U.S.A..  pp.223-228,  1991.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 223
9.

国際会議録
国際会議録
9. COMPARATIVE STUDIES OF FURNACE AND RAPID THERMAL PASSIVATION FOR ACCUMULATION AND INVERSION MODE POLYSILICON-ON-OXIDE MOSFETS
Batra, S. ; Park, K. ; Banerjee, S. ; Sundaresan, R.
出版情報: Polysilicon thin films and interfaces.  pp.393-398,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 182
10.

国際会議録
国際会議録
10. *REACTION KINETICS OF EPITAXIAL SILICON DEPOSITION AT 200-400o USING REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
Anthony, B. ; Hsu, T. ; Breaux, L. ; Banerjee, S. ; Tasch, A.
出版情報: Characterization of plasma-enhanced CVD processes : symposium held Novermber 27-28, 1989, Boston, Massachusetts, U.S.A..  pp.145-150,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 165