1.

国際会議録
国際会議録
1. Thermal activation energies for the three inequivalent lattice sites for the BSi acceptor in 6H-SiC
Evwaraye,A.O. ; Smith,S.R. ; Mitchel,W.C. ; Hobgood,H.McD. ; Augustine,G. ; Balakrishna,V.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.691-696,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
2.

国際会議録
国際会議録
2. Deep Levels in SiC:V by High Temperature Transport Measurements
Mitchel,W.C. ; Perrin,R. ; Goldstein,J. ; Roth,M. ; Ahoujja,M. ; Smith,S.R. ; Evwaraye,A.O. ; Solomon,J.S. ; Landis,G. ; Jenny,J. ; Hobgood,H.McD. ; Augustine,G. ; Balakrishna,V.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.545-548,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268