A 1200-V 600-A Silicon-Carbide Half-Bridge Power Module for Drop-In Replacement of an IGBT IPM.

A 1200-V 600-A Silicon-Carbide Half-Bridge Power Module for Drop-In Replacement of an IGBT IPM.

著者名:

掲載資料名:

2010 SAE world congress : technical paper

シリーズ名:

Society of Automotive Engineers technical paper series

シリーズ巻号:

2010

発行年:

2010

通号:

2010-01-1251

ペーパー番号:

2010-01-1251

総ページ数:

6

出版情報:

Warrendale, Penn.: Society of Automotive Engineers

ISSN:

01487191

言語:

英語

請求記号:

S10400

資料種別:

テクニカルペーパー

詳細

TDL書誌ID:	ZA00052110
シリーズID:	PA00000058
会議名:	SAE 2010 World Congress
回次:	2010
会議開催地:	Detroit, MI, USA
会議開催年:	2010.04.13-2010.04.15
論文注記:	SAE 2010 World Congress, April 13-15, 2010, Detroit, Michigan, USA

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