DEFECT STUDIES IN ONE-MEV ELECTRON IRRADIATED GaAs AND IN A1Ga1-xAs P-N junction solar cells

DEFECT STUDIES IN ONE-MEV ELECTRON IRRADIATED GaAs AND IN A1Ga1-xAs P-N junction solar cells

著者名:

Li, Sheng S. ( University of Florida )
Wang, W. L. ( University of Florida )
Loo, R. Y. ( Hughes Research Laboratory )
Rahilly, W. P. ( Aeropropulsion Laboratory )

掲載資料名:

NASA Technical Reports

発行年:

1984

号:

NASA-CP-2314

通号:

G3/44 17806

パート:

NAS 1.55:2314

ペーパー番号:

N84-29321

開始ページ:

1

終了ページ:

11

総ページ数:

11

出版情報:

National Aeronautics and Space Administration

言語:

英語

資料種別:

テクニカルペーパー

詳細

TDL書誌ID:

ZA00002949

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