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The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices

著者名:
P.M. Gammon
F. Li
C.W. Chan
A.M. Sanchez
S.A. Hindmarsh
F. Gity
T. Trajkovic
V. Kilchytska
V. Pathirana
G. Camuso
K. Ben Ali
D. Flandre
P.A. Mawby
J.W. Gardner
さらに 9 件
掲載資料名:
Silicon Carbide and Related Materials 2016
シリーズ名:
Materials science forum
シリーズ巻号:
897
発行年:
2017
開始ページ:
747
終了ページ:
750
総ページ数:
4
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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