4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics
- 著者名:
S.I. Kuroki T. Kurose H. Nagatsuma S. Ishikawa T. Maeda H. Sezaki T. Kikkawa T. Makino T. Ohshima M. Östling C.M. Zetterling - 掲載資料名:
- Silicon Carbide and Related Materials 2016
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 897
- 発行年:
- 2017
- 開始ページ:
- 669
- 終了ページ:
- 672
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9783035710434 [3035710430]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices
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