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Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors

著者名:
M.I. Idris
M.H. Weng
H.K. Chan
A.E. Murphy
D.A. Smith
R.A.R. Young
E.P. Ramsay
D.T. Clark
N.G. Wright
A.B. Horsfall
さらに 5 件
掲載資料名:
Silicon Carbide and Related Materials 2016
シリーズ名:
Materials science forum
シリーズ巻号:
897
発行年:
2017
開始ページ:
513
終了ページ:
516
総ページ数:
4
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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