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3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode

著者名:
A. Shima
H. Shimizu
Y. Mori
M. Sagawa
K. Konishi
R. Fujita
T. Ishigaki
N. Tega
K. Kobayashi
S. Sato
Y. Shimamoto
さらに 6 件
掲載資料名:
Silicon Carbide and Related Materials 2016
シリーズ名:
Materials science forum
シリーズ巻号:
897
発行年:
2017
開始ページ:
493
終了ページ:
496
総ページ数:
4
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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