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Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode

著者名:
S. Hino
H. Hatta
K. Sadamatsu
Y. Nagahisa
S. Yamamoto
T. Iwamatsu
Y. Yamamoto
M. Imaizumi
S. Nakata
S. Yamakawa
さらに 5 件
掲載資料名:
Silicon Carbide and Related Materials 2016
シリーズ名:
Materials science forum
シリーズ巻号:
897
発行年:
2017
開始ページ:
477
終了ページ:
482
総ページ数:
6
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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