Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer | 東京工業大学附属図書館文献データベース

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Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer

著者名:

さらに 9 件

掲載資料名:

Silicon Carbide and Related Materials 2016

シリーズ名:

Materials science forum

シリーズ巻号:

897

発行年:

2017

開始ページ:

419

終了ページ:

422

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710434 [3035710430]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00066569
シリーズID:	PA00000012
会議名:	ECSCRM
回次:	2016
会議開催地:	Halkidiki, Greece
会議開催年:	2016.09.25-2016.09.29
論文注記:	ECSCRM 2016, 25-29 September, 2016, Halkidiki, Greece

類似資料:

1 国際会議録 Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress Y. Iwahashi, M. Miyazato, M. Miyajima, Y. Yonezawa, T. Kato, H. Fujiwara, K. Hamada, A. Otsuki, H. Okumura Trans Tech Publications	7 国際会議録 Dynamic Characteristics of 4H-SiC pin Dlode on (000-1)C-Face with Small Forward Degradation Nakayama, K., Sugawara, Y., Ishii, R., Tsuchida, H., Miyanagi, T., Kamata, I., Nakamura, T. Trans Tech Publications
2 国際会議録 Cause of Forward Voltage Degradation for 4H-SiC PiN Diode with Additional Process Tetsuro Hemmi, Koji Nakayama, Katsunori Asano, Tetsuya Miyazawa, Hidekazu Tsuchida Materials Research Society	8 国際会議録 Growth of 4H-SiC Epilayers and Z_1/2 Center Elimination T. Miyazawa, H. Tsuchida Trans Tech Publications
3 国際会議録 Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping T. Miyazawa, T. Tawara, H. Tsuchida Trans Tech Publications	9 国際会議録 Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers T. Miyazawa, M. Ito, H. Tsuchida Trans Tech Publications
4 国際会議録 V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes T. Miyazawa, T. Tawara, H. Tsuchida Trans Tech Publications	10 国際会議録 SiC Zener Diode for Gate Protection of 4.5 kV SiCGT K. Nakayama, R. Ishii, K. Asano, T. Miyazawa, H. Tsuchida Trans Tech Publications
5 国際会議録 8.3 kV 4H-SiC PiN Diode on (0001) C-Face with Small Forward Voltage Degradation Nakayama, K., Sugawara, Y., Tsuchida, H., Miyanagi, T., Kamata, I., Nakamura, T., Asano, K., Ishii, R. Trans Tech Publications	11 国際会議録 Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement Izumi, S., Fujisawa, H., Tawara, T., Ueno, K., Hiraoka, M. Trans Tech Publications
6 国際会議録 Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime K. Nakayama, A. Tanaka, K. Asano, T. Miyazawa, H. Tsuchida Trans Tech Publications	12 国際会議録 Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers N. Thierry-Jebali, C. Kawahara, T. Miyazawa, H. Tsuchida, T. Kimoto Trans Tech Publications

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