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Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers

著者名:
L. Lilja
I. Farkas
I. Booker
J. ul Hassan
E. Janzén
J.P. Bergman
さらに 1 件
掲載資料名:
Silicon Carbide and Related Materials 2016
シリーズ名:
Materials science forum
シリーズ巻号:
897
発行年:
2017
開始ページ:
238
終了ページ:
241
総ページ数:
4
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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