SEM and ECC Imaging Study of Step-Bunched Structure on 4H-SiC Epitaxial Layers
- 著者名:
Y. Tabuchi M. Sonoda K. Ashida T. Kaneko N. Ohtani M. Katsuno S. Sato H. Tsuge T. Fujimoto - 掲載資料名:
- Silicon Carbide and Related Materials 2016
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 897
- 発行年:
- 2017
- 開始ページ:
- 205
- 終了ページ:
- 208
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9783035710434 [3035710430]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications | |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
4
国際会議録
Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
11
国際会議録
Growth of High Quality 4H-SiC Crystals in Controlled Temperature Distributions of Seed Crystals
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |