Two-Dimensional Imaging of Trap Distribution in SiO2/SiC Interface Using Local Deep Level Transient Spectroscopy Based on Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

Two-Dimensional Imaging of Trap Distribution in SiO₂/SiC Interface Using Local Deep Level Transient Spectroscopy Based on Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

著者名:

N. Chinone

掲載資料名:

Silicon Carbide and Related Materials 2016

シリーズ名:

Materials science forum

シリーズ巻号:

897

発行年:

2017

開始ページ:

127

終了ページ:

130

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710434 [3035710430]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00066569
シリーズID:	PA00000012
会議名:	ECSCRM
回次:	2016
会議開催地:	Halkidiki, Greece
会議開催年:	2016.09.25-2016.09.29
論文注記:	ECSCRM 2016, 25-29 September, 2016, Halkidiki, Greece

類似資料:

1 国際会議録 Nondestructive and Local Evaluation of SiO₂/SiC Interface Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy N. Chinone, R. Kosugi, Y. Tanaka, S. Harada, H. Okumura Trans Tech Publications	7 国際会議録 A Study of Deep Energy-Level Traps at the 4H-SiC/SiO₂ Interface and Their Passivation by Hydrogen F. Allerstam, E.Ö. Sveinbjörnsson Trans Tech Publications
2 国際会議録 Universal Parameter Evaluating SiO₂/SiC Interface Quality Based on Scanning Nonlinear Dielectric Microscopy N. Chinone, A. Nayak, R. Kosugi, Y. Tanaka, S. Harada, Y. Kiuchi, H. Okumura, Y. Cho Trans Tech Publications	8 国際会議録 Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy M. Hauck, J. Weisse, J. Lehmeyer, G. Pobegen, H.B. Weber, M. Krieger Trans Tech Publications
3 国際会議録 Visualization of Polarization and Two Dimensional Electron Gas Distribution in AlGaN/GaN Heterostructure Using Scanning Nonlinear Dielectric Microscopy K. Hirose, N. Chinone, Y. Cho Trans Tech Publications	9 国際会議録 Observation of SiO2/SiC Interface with Different Off-Angle from Si(0001) Face Using Transmission Electron Microscopy Fukuda, K., Suzuki, S., Senzaki, J., Kosugi, R., Tanaka, T., Arai, K. Trans Tech Publications
4 国際会議録 Deep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO₂/SiC Interfaces on C-Face 4H-SiC T. Hatakeyama, T. Shimizu, T. Suzuki, Y. Nakabayashi, H. Okumura Trans Tech Publications	10 国際会議録 Two-Dimensional Roughness Growth at Surface and Interface of SiO₂ Films during Thermal Oxidation of 4H-SiC(0001) R. Hasunuma, T. Fukasawa, R. Kosugi, Y. Ishida, K. Yamabe Trans Tech Publications
5 国際会議録 Deep-Level Transient Spectroscopy Characterization of Interface States in SiO₂/4H-SiC Structures Close to the Conduction Band Edge T. Hatakeyama, M. Sometani, K. Fukuda, H. Okumura, T. Kimoto Trans Tech Publications	11 国際会議録 Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy Fujimaki, M., Ono, Rudi, Kushibe, M., Masahara, K., Kojima, K., Shinohe, T., Okushi, H., Arai, K. Trans Tech Publications
6 国際会議録 Higher Order Nonlinear Dielectric Microscopy Cho, Yasuo, Ohara, Koya Materials Research Society	12 国際会議録 Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy Fujimaki, M., Ono, R., Kushibe, M., Masahara, K., Kojima, K., Shinohe, T., Okushi, H., Arai, K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12